Commissariat à l’énergie atomique et aux énergies alternatives (CEA) has expertise in the design and fabrication of Coulomb blockade devices fabricated with industrial CMOS technology on 300 mm silicon-on-insulator wafers. The team involved in this project also performs systematic room-temperature characterisation measurements on 300 mm probe stations, as well as low temperature and high frequency electrical measurements (down to 30 mK and at 2 GHz). CEA coordinates French (ANR) and EU projects on these topics. CEA has successfully produced silicon-based single-electron sources in EMRP JRP SIB07 Qu-Ampere; and will contribute to the device fabrication and characterisation of Si pumps.